Green fabrication of lanthanide-doped hydroxide-based phosphors: Y(OH)₃:Eu³⁺ nanoparticles for white light generation

• Tugrul Guner,
• Anilcan Kus,
• Mehmet Ozcan,
• Aziz Genc,
• Hasan Sahin and
• Mustafa M. Demir

Beilstein J. Nanotechnol. 2019, 10, 1200–1210, doi:10.3762/bjnano.10.119

• bandgap of 3.83 eV, some midgap states emerge after the interstitial doping of Eu. The energy bandgap of the host at the vicinity of doped region increases to 4.28 eV. The band and orbital decomposed charge density presented in Figure 5b shows that the midgap state is formed by strongly hybridized Eu and

Robust midgap states in band-inverted junctions under electric and magnetic fields

• Álvaro Díaz-Fernández,
• Natalia del Valle and
• Francisco Domínguez-Adame

Beilstein J. Nanotechnol. 2018, 9, 1405–1413, doi:10.3762/bjnano.9.133

• semiconductor bands can be tailored by the electric field. Tunable devices are thus likely to be realizable, exploiting the properties studied herein. Keywords: crystalline topological insulators; electric and magnetic fields; Landau levels; midgap states; Introduction In 1982, Thouless et al. [1] made a

• recently studied band-inverted junctions based on IV–VI compounds using a two-band model when an electric field is applied along the growth direction [25]. We have demonstrated that the Dirac cone of midgap states is robust against moderate values of the electric field but Fermi’s velocity decreases

• addition, we focus on states close to one of the L points of the Brillouin zone [8] and neglect other valleys in what follows since midgap states are stable against gap opening by valley mixing. Also notice that only linear momentum terms are taken into account in Equation 2 but quadratic momentum terms